Split gate flash memory device having self-aligned control...

Details Split gate flash memory device having self-aligned control... Split gate flash memory device having self-aligned control...

2005-12-13

2008-03-11

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C257SE21422, C257SE21681

Reexamination Certificate

active

07341912

ABSTRACT:
In a flash memory device, which can maintain an enhanced electric field between a control gate and a storage node (floating gate) and has a reduced cell size, and a method of manufacturing the flash memory device, the flash memory device includes a semiconductor substrate having a pair of drain regions and a source region formed between the pair of drain regions, a pair of spacer-shaped control gates each formed on the semiconductor substrate between the source region and each of the drain regions, and a storage node formed in a region between the control gate and the semiconductor substrate. A bottom surface of each of the control gates includes a first region that overlaps with the semiconductor substrate and a second region that overlaps with the storage node. The pair of spacer-shaped control gates are substantially symmetrical with each other about the source region.

REFERENCES:
patent: 5492846 (1996-02-01), Hara
patent: 6133097 (2000-10-01), Hsieh et al.
patent: 6518110 (2003-02-01), Wen
patent: 6589842 (2003-07-01), Huang
patent: 6632714 (2003-10-01), Yoshikawa
patent: 6798015 (2004-09-01), Kasuya
patent: 6855602 (2005-02-01), Chang et al.
patent: 7037783 (2006-05-01), Jeon et al.
patent: 7078295 (2006-07-01), Jeon et al.
patent: 2005/0208744 (2005-09-01), Jeon et al.
patent: 2006/0008984 (2006-01-01), Jeon et al.
patent: 10-229136 (1998-08-01), None
patent: 10-2002-0044702 (2002-06-01), None

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