Method for fabricating a semiconductor device having an...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S586000, C438S627000, C438S637000, C438S630000, C257SE21438, C257SE21507, C257SE21577

Reexamination Certificate

active

07422942

ABSTRACT:
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

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