Sequential reducing plasma and inert plasma pre-treatment...

Details Sequential reducing plasma and inert plasma pre-treatment... Sequential reducing plasma and inert plasma pre-treatment...

2004-08-02

2008-03-04

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S586000, C438S710000, C438S706000, C438S685000, C438S637000, C257SE21252

Reexamination Certificate

active

07338903

ABSTRACT:
A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer may be formed employing a chemical vapor deposition method, such as an atomic layer deposition method. When the deposition method employs a metal and carbon containing source material, the two-step plasma pretreatment provides the barrier layer with enhanced electrical properties.

REFERENCES:
patent: 6656832 (2003-12-01), Pan et al.
patent: 6796642 (2004-09-01), Toba et al.
patent: 2002/0157610 (2002-10-01), Sekiguchi et al.
patent: 2002/0162736 (2002-11-01), Ngo et al.
patent: 2002/0173142 (2002-11-01), Vanhaelemeersch et al.
patent: 2003/0224595 (2003-12-01), Smith et al.

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