Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2008-07-29
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
07405444
ABSTRACT:
A semiconductor structure embodiment comprises a semiconductor membrane with local strained areas. The membrane with local strained areas is formed by a process including performing a local oxidation of silicon (LOCOS) process in a substrate and removing resulting oxide to form a recess in the substrate, and bonding a semiconductor membrane to the substrate to induce a strain where the membrane conforms to the recess in the substrate.
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Micro)n Technology, Inc.
Prenty Mark
Schwegman Lundberg & Woessner, P.A.
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