Semiconductor device including MIS transistors

Details Semiconductor device including MIS transistors Semiconductor device including MIS transistors

2008-07-29

2008-07-29

Le, Thao X. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S275000

Reexamination Certificate

active

11020275

ABSTRACT:
The present invention is to obtain an MIS transistor which allows considerable reduction in threshold fluctuation for each transistor and has a low threshold voltage. First gate electrode material for nMIS and second gate electrode material for pMIS can be mutually converted to each other, so that a process can be simplified. Such a fact that a dependency of a work function on a doping amount is small is first disclosed, so that fluctuation in threshold voltage for each transistor hardly occurs.

REFERENCES:
patent: 3491014 (1970-01-01), Giuseppe et al.
patent: 5986301 (1999-11-01), Fukushima et al.
patent: 6458695 (2002-10-01), Lin et al.
patent: 6677652 (2004-01-01), Lin et al.
patent: 6743292 (2004-06-01), Jia et al.
patent: 6794234 (2004-09-01), Polishchuk et al.
patent: 6797413 (2004-09-01), Takeishi et al.
patent: 6818347 (2004-11-01), Jin et al.
patent: 7042043 (2006-05-01), Forbes et al.
patent: 2002-237589 (2002-08-01), None
patent: 2002-289844 (2002-10-01), None
patent: 2003/273350 (2003-09-01), None
Polishchuk et al.; “Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion”, Materials Research Society Symposium Proceeding, vol. 670, pp. K5.1.1-K5.1.6, (2001).
Claflin et al.; “High-κ Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials”, Materials Research Society Symposium Proceeding, vol. 567, pp. 603-609, (1999).
Notification of Reason for Rejection mailed on Jul. 13, 2007, in counterpart Japanese Application No. 432199/2003.
Notification of Reason for Rejection issued by the Japanese Patent Office on Oct. 16, 2007, for Japanese Patent Application No. 2003-432199, and English-language translation thereof.

Affiliated with

Also associated with

Rating

Semiconductor device including MIS transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including MIS transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including MIS transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3959192