Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-09-16

2008-09-16

Quach, Tuan N. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S209000, C438S270000, C257SE21415, C257SE21703

Reexamination Certificate

active

11372844

ABSTRACT:
A method of manufacturing a semiconductor device includes forming on a semiconductor substrate, a plurality of multi-layered structures each including a first semiconductor layer and a second semiconductor layer that is deposited over the first semiconductor layer and has an etching rate smaller than the etching rate of the first semiconductor layer, forming a first trench through the first semiconductor layer and the second semiconductor layer, forming a support body on sidewalls of the first semiconductor layer and the second semiconductor layer in the first trench, forming a second trench that exposes through the second semiconductor layer, etching the first semiconductor layer via the second trench selectively, to form under the second semiconductor layer, a cavity resulting from removal of the first semiconductor layer, forming a buried insulating layer that is buried in the cavity, exposing a side surface of the deposited second semiconductor layer, forming a gate insulating film on the exposed side surface of the second semiconductor layer, forming a gate electrode over the side surface of the second semiconductor layer with intermediary of the gate insulating film there between, implementing first ion-implantation through the top surface of the second semiconductor layer, implementing second ion-implantation through the top surface of the second semiconductor layer.

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patent: 7078723 (2006-07-01), Lin et al.
patent: 2005/0255678 (2005-11-01), Kato
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patent: 2000-124092 (2000-04-01), None
patent: 2002-299591 (2002-10-01), None
T. Sakai et al., Separation by Bonding Si Islands (SBBI) for LSI Applications, Second International SiGe Technology and Device Meeting, Meeting Abstract, May 2004, pp. 230-231.

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