Method of forming a field effect transistor having a...

Details Method of forming a field effect transistor having a... Method of forming a field effect transistor having a...

2008-03-11

2008-03-11

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C257SE21292, C257SE21293

Reexamination Certificate

active

11177774

ABSTRACT:
A semiconductor structure comprises a transistor element formed in a substrate. A stressed layer is formed over the transistor element. The stressed layer has a predetermined compressive intrinsic stress having an absolute value of about 1 GPa or more. Due to this high intrinsic stress, the stressed layer exerts considerable elastic forces to the channel region of the transistor element. Thus, compressive stress is created in the channel region. The compressive stress leads to an increase of the mobility of holes in the channel region.

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A definition of SUBSTANTIAL in Merriam-Webster onLine.

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