Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-01-29
2008-01-29
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE23077, C257SE23134
Reexamination Certificate
active
10881874
ABSTRACT:
The invention includes semiconductor constructions comprising dielectric materials which contain cerium oxide and titanium oxide. The dielectric materials can contain a homogeneous distribution of cerium oxide and titanium oxide, and/or can contain a laminate of cerium oxide and titanium oxide. The dielectric materials can be incorporated into any suitable semiconductor devices, including, for example, capacitor devices, transistor devices, and flash memory devices. The invention also includes methods of utilizing atomic layer deposition to form laminates of cerium oxide and titanium oxide.
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Ahn Kie Y.
Forbes Leonard
Estrada Michelle
Micro)n Technology, Inc.
Wells St. John P.S.
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