Reducing wire erosion during damascene processing

Details Reducing wire erosion during damascene processing Reducing wire erosion during damascene processing

2008-07-29

2008-07-29

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S628000, C438S631000, C438S637000, C438S689000, C438S690000, C438S691000, C438S697000, C438S706000, C438S712000, C438S961000, C438S508000

Reexamination Certificate

active

10906013

ABSTRACT:
A damascene process incorporating a GCIB step is provided. The GCIB step can replace one or more CMP steps in the traditional damascene process. The GCIB step allows for selectable removal of unwanted material and thus, reduces unwanted erosion of certain nearby structures during damascene process. A GCIB step may also be incorporated in the damascene process as a final polish step to clean up surfaces that have been planarized using a CMP step.

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