Method of fabricating NAND-type flash EEPROM without field...

Details Method of fabricating NAND-type flash EEPROM without field... Method of fabricating NAND-type flash EEPROM without field...

2008-07-15

2008-07-15

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27155

Reexamination Certificate

active

10971465

ABSTRACT:
Methods are described for fabricating NAND-type EEPROMs without field oxide isolation. P+ implantations are employed to isolate adjacent memory cells.

REFERENCES:
patent: 5486480 (1996-01-01), Chen
patent: 5512504 (1996-04-01), Wolstenholme et al.
patent: 6376876 (2002-04-01), Shin et al.

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