Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-29
2008-07-29
Pham, Hoai v (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S396000, C257SE21648
Reexamination Certificate
active
11976115
ABSTRACT:
An interlayer insulating film (22) is formed on a semiconductor substrate. A conductive plug (25) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier conductive film (33) is formed on the interlayer insulating film and being inclusive of an area of the conductive plug as viewed in plan. A capacitor (35) laminating a lower electrode, a dielectric film and an upper electrode in this order is formed on the oxygen barrier film. An intermediate layer (34) is disposed at an interface between the oxygen barrier film and the lower electrode. The intermediate layer is made of alloy which contains at least one constituent element of the oxygen barrier film and at least one constituent element of the lower electrode.
REFERENCES:
patent: 6831323 (2004-12-01), Ito et al.
patent: 7221015 (2007-05-01), Ando et al.
patent: 11-168174 (1999-06-01), None
patent: 2000-91511 (2000-03-01), None
patent: 2002-151656 (2002-05-01), None
patent: 2004-47633 (2004-02-01), None
Fujitsu Limited
Pham Hoai v
Westerman Hattori Daniels & Adrian LLP
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