Method of depositing a layer of a material on a substrate

Details Method of depositing a layer of a material on a substrate Method of depositing a layer of a material on a substrate

2008-03-04

2008-03-04

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S303000, C257SE21626

Reexamination Certificate

active

11009825

ABSTRACT:
The present invention makes it possible to precisely deposit a material adjacent a feature on a substrate. A layer of the material is deposited on the substrate. The layer is planarized and exposed to an etchant. The etchant is adapted to selectively remove the material. The exposing of the layer to the etchant is stopped prior to a complete removal of the layer.

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patent: 0 747 941 (1996-12-01), None
patent: 1 122 771 (2001-08-01), None

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