Semiconductor device having high-voltage transistor and PIP...

Details Semiconductor device having high-voltage transistor and PIP... Semiconductor device having high-voltage transistor and PIP...

2008-05-13

2008-05-13

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S238000, C257SE27071

Reexamination Certificate

active

11320485

ABSTRACT:
A semiconductor device having a high-voltage transistor and a polysilicon-insulator-polysilicon (PIP) capacitor, and a method for fabricating the same are provided. A current flow path of the high-voltage transistor is widened to reduce on-resistance of the device. Thus, electric characteristics of the device are enhanced. The semiconductor device includes a substrate having a high-voltage transistor area and a PIP capacitor area, an extended drain region disposed in the high-voltage transistor area and separated from a source region, an impurity region formed in an upper portion of the extended drain region, and a drain region formed on a surface of the substrate and disposed within the impurity region.

REFERENCES:
patent: 7011999 (2006-03-01), Minami et al.
patent: 7208364 (2007-04-01), Pan et al.

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