Structure and method for accurate deep trench resistance...

Details Structure and method for accurate deep trench resistance... Structure and method for accurate deep trench resistance...

2008-01-15

2008-01-15

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000

Reexamination Certificate

active

10904528

ABSTRACT:
A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a pair of deep trenches formed within a semiconductor substrate. The pair of deep trenches has a dielectric material formed on side and bottom surfaces thereof, and includes a conductive fill material therein. Bottom portions of the pair of deep trenches are merged with one another so as to provide an electrically conductive path therethrough.

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