Structure for amorphous carbon based non-volatile memory

Details Structure for amorphous carbon based non-volatile memory Structure for amorphous carbon based non-volatile memory

2008-03-18

2008-03-18

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

11447909

ABSTRACT:
A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.

REFERENCES:
patent: 6482741 (2002-11-01), Ueno
patent: 6486065 (2002-11-01), Vyvoda et al.
patent: 6511645 (2003-01-01), Nesbitt et al.
patent: 6642107 (2003-11-01), Seo et al.
patent: 6649969 (2003-11-01), Tsuji et al.
patent: 6683322 (2004-01-01), Jackson et al.
patent: 6689644 (2004-02-01), Johnson
E. G. Gerstner et al.—“Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films,” Journal of Applied Physics, vol. 84, No. 10, Nov. 15, 1998, pp. 5647-5651.

Affiliated with

Also associated with

Rating

Structure for amorphous carbon based non-volatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure for amorphous carbon based non-volatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for amorphous carbon based non-volatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3925755