Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-29

2008-04-29

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S358000, C257S379000, C257S380000, C257S581000

Reexamination Certificate

active

11261794

ABSTRACT:
The semiconductor device comprises a resistance element26formed of polysilicon film formed on a silicon substrate10, which includes a resistor part26ahaving a resistance value set at a prescribed value, contact parts26bformed on both sides of the resistor part26aand connected to a line for applying a fixed potential, and a heat radiation part26cconnected to the contact part26b, whereby the semiconductor device can include the resistance element having a small parasitic capacitance and good heat radiation.

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Korean Office Action dated Dec. 13, 2006, issued in Korean Application No. 10-2005-7022558.
Chinese Office Action dated Sep. 21, 2007, issued in Chinese Application No. 038265532.

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