Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-20
2008-05-20
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21680
Reexamination Certificate
active
11292733
ABSTRACT:
A method of manufacturing flash memory devices includes depositing a nitride film over a semiconductor substrate and forming an oxide film below the nitride film using an oxidization process involving an anneal process. A tunnel oxide film or an ONO2 oxide film having a thin thickness and a good film quality is formed and the operating performance of memory cells is improved.
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Coleman W. David
Hynix / Semiconductor Inc.
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