Self-aligned nanometer-level transistor defined without...

Details Self-aligned nanometer-level transistor defined without... Self-aligned nanometer-level transistor defined without...

2008-03-11

2008-03-11

Malsawma, Lex (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21623, C257SE21637, C257SE21014

Reexamination Certificate

active

11271094

ABSTRACT:
A field effect transistor (FET) device structure and method for forming FETs for scaled semiconductor devices. Specifically, FinFET devices are fabricated from silicon-on-insulator (SOI) wafers in a highly uniform and reproducible manner. The method facilitates formation of FinFET devices with improved and reproducible fin height control while providing isolation between source and drain regions of the FinFET device.

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