Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2008-05-27
2008-05-27
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S700000, C257S738000, C257S748000, C257S773000, C257S774000, C257S781000, C257S786000, C257S790000
Reexamination Certificate
active
11213867
ABSTRACT:
A plurality of film insulators having conductive patterns that are formed on surfaces and conductive vias that pass through the film insulators in the direction of thickness are stacked together and collectively subjected to pressure and heat to be formed as a single unit. On one outermost layer of the multilayer board that has been thus formed, a plurality of connection terminals are exposed to the outside, connection bumps of an LSI chip being secured to these connection terminals. On the outermost layer of the opposite side, a multiplicity of metal pads are provided, and a solder ball is secured on each metal pad to form a ball grid array (BGA) structure for connecting to a motherboard.
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“Microelectronics Packaging Handbook” Japanese Version, pp. 375-411 Rao R. Tummala, Eugene J. Rymaszewski, and Alan G. Klopfenstein.
“Microelectronics Packaging Handbook” Japanese Version, pp. 375-411 Rao R. Tummala, Eugene J. Rymaszewski, and Alan G. Klopfenstein, Dec. 1989.
Hayashi Akimori
Kataoka Ryohei
Kondo Koji
Murai Tadashi
Nakagoshi Makoto
Denso Corporation
NEC Electronics Corporation
Soward Ida M
Young & Thompson
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