Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-18
2008-03-18
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S459000, C438S977000, C257S503000
Reexamination Certificate
active
11427204
ABSTRACT:
A semiconductor wafer is provided with a wiring structure, and semiconductor chip positions arranged in rows and columns. The semiconductor wafer has at least one coating (6) as a self-supporting dimensionally stable substrate layer (4), and/or as a wiring structure composed of conductive, high-temperature-resistant material. The coating material (6) of the substrate layer (4) and/or of the wiring structure has a ternary carbide and/or a ternary nitride and/or carbon.
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Hultman L. Prof; “Materials Science of MAX-Phase Thin Films”; Gordon Laboratory Seminar Series Abstracts; 2 Pgs., 2005.
Schulze Hans-Joachim
Strack Helmut
Eschweiler & Associates LLC
Infineon - Technologies AG
Lee Hsien-Ming
Singal Ankush K
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