Selective incorporation of charge for transistor channels

Details Selective incorporation of charge for transistor channels Selective incorporation of charge for transistor channels

2008-05-20

2008-05-20

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S216000, C438S240000, C438S259000, C438S263000, C438S264000, C438S283000, C438S286000, C257SE21202

Reexamination Certificate

active

11346662

ABSTRACT:
A device and method for selective placement of charge into a gate stack includes forming gate stacks including a gate dielectric adjacent to a transistor channel and a gate conductor and forming doped regions for transistor operation. A layer rich in a passivating element is deposited over the doped regions and the gate stack, and the layer rich the passivating element is removed from selected transistors. The layer rich in the passivating element is than annealed to drive-in the passivating element to increase a concentration of charge at or near transistor channels on transistors where the layer rich in the passivating element is present. The layer rich in the passivating element is removed.

REFERENCES:
patent: 2002/0094643 (2002-07-01), Solomon et al.

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