Silicon containing TARC/barrier layer

Details Silicon containing TARC/barrier layer Silicon containing TARC/barrier layer

Filed on

2008-01-22

Date issued

2008-01-22

Examiner

Lee, Sin (Department: 1752)

Patent Class

Radiation imagery chemistry: process, composition, or product th

SubClass

Imaging affecting physical property of radiation sensitive...

SubSubClass

Making electrical device

Other Related Categories

C430S325000, C430S326000, C430S313000, C430S316000, C430S317000, C430S318000

Type

Reexamination Certificate

Status

active

Patent number

10980365

Description

ABSTRACT:
A top anti-reflective coating material (TARC) and barrier layer, and the use thereof in lithography processes, is disclosed. The TARC/barrier layer may be especially useful for immersion lithography using water as the imaging medium. The TARC/barrier layer comprises a polymer which comprises at least one silicon-containing moiety and at least one aqueous base soluble moiety. Suitable polymers include polymers having a silsesquioxane (ladder or network) structure, such as polymers containing monomers having the structure:where R1comprises an aqueous base soluble moiety, and x is from about 1 to about 1.95, more preferably from about 1 to about 1.75.

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“Exploring the Needs and Tradeoffs for Immersion Resist Topcoating” Mark Slezak, Zhi Liu, Raymond Hung, JSR Micro Inc. Solid State Technology, Jul. 2004, pp. 91-92, 96-97.
U.S. Appl. No. 10/855,045, Entitled: Top Coat Material and Use Thereof in Lithography Processes.
U.S. Appl. No. 10/855,045, filed May 27, 2004, Entitled: Top Coat Material and Use Thereof in Lithography Processes.

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