Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2008-07-29
2008-07-29
Evans, Geoffrey S (Department: 1793)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C219S121660, C438S166000
Reexamination Certificate
active
11679724
ABSTRACT:
In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.
REFERENCES:
patent: 6323457 (2001-11-01), Jung
patent: 6506636 (2003-01-01), Yamazaki et al.
patent: 6933185 (2005-08-01), Wada et al.
patent: 7009140 (2006-03-01), Partio et al.
patent: 2004/0115931 (2004-06-01), Liu et al.
patent: 2005/0002016 (2005-01-01), Tsao
patent: 2001-102323 (2001-04-01), None
patent: 2001-246484 (2001-09-01), None
patent: 2004-228486 (2004-08-01), None
Masakiyo Matumura “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Journal of the Surface Science Society of Japan, vol. 21, No. 5, Mar. 28, 2000, pp. 34-43.
Akita Noritaka
Hiramatsu Masato
Jyumonji Masayuki
Kato Tomoya
Ogawa Hiroyuki
Advanced LCD Technologies Development Center Co. Ltd.
Evans Geoffrey S
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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