Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2008-01-08

2008-01-08

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S300000

Reexamination Certificate

active

11004836

ABSTRACT:
The semiconductor device comprises a semiconductor layer18formed on an insulation layer16, a gate electrode22formed on the semiconductor layer with a gate insulation film20formed therebetween, a source/drain region24formed on the semiconductor layer on both sides of the gate electrode, and a semiconductor region14buried in the insulation layer16in a region below the gate electrode. The surface scattering of the carriers and phonon scattering can be prevented while suppressing the short channel effect. Resultantly the semiconductor device can have high mobility and high speed.

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