Methods of forming metal-containing structures

Details Methods of forming metal-containing structures Methods of forming metal-containing structures

2008-07-01

2008-07-01

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21171

Reexamination Certificate

active

11181271

ABSTRACT:
The invention includes methods of forming metal-containing layers. The layers can, in particular aspects, consist essentially of metal, or consist of metal. The desired layers can be formed by initially depositing a metal-containing layer which comprises metal and halogen atoms. Subsequently, trialkylaluminum is utilized to remove the halogen atoms from the layer. The layer remaining after removal of the halogen atoms can comprise, consist essentially, or consist of any suitable metal, and in particular aspects can consist essentially of, or consist of, titanium or titanium/aluminum.

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