Projection exposure apparatus

X-ray or gamma ray systems or devices – Specific application – Lithography

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378 85, H01L 7130

Patent

active

055240399

ABSTRACT:
In a projection optical system, synchrotron radiation light emitted from a beam source is reflected by a first mirror and travels through a stop to form a secondary light source surface at a position on a second mirror. The beam reflected from the second mirror is incident upon a reflection type mask on which a circuit pattern is previously formed. A pupil surface is formed at a position on a third mirror by the beam reflected from the mask. The beam reflected by the third mirror reaches a wafer. The circuit pattern on the mask is thereby transferred onto the wafer.

REFERENCES:
patent: 5003567 (1991-03-01), Hawryluk et al.
patent: 5187726 (1993-02-01), White
patent: 5222112 (1993-06-01), Terasawa et al.
patent: 5328784 (1994-07-01), Fukuda
patent: 5339346 (1994-08-01), White

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