Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2007-08-14

2007-08-14

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C438S573000, C257SE21422

Reexamination Certificate

active

11077233

ABSTRACT:
A manufacturing method of a semiconductor memory device comprising the steps of: forming plural trenches in stripes in a semiconductor substrate and filling each of the trenches with an element isolation insulating film to form element isolation regions; sequentially forming a tunnel insulating film and a charge-storable film so as to cover active regions between the element isolation regions; forming an interlayer insulating film on the charge-storable film; forming plural control gates on the interlayer insulating film in a direction orthogonal to a longitudinal direction of the trenches; among source formation regions and drain formation regions alternately provided between the plural control gates, etching the element isolation insulating film in the source formation regions, using as a mask a resist film having openings in the source formation regions, to expose surfaces of the trenches; and carrying out isotropic plasma ion implantation on the source formation regions to form source diffusion layers in the surfaces of the trenches and in the active regions.

REFERENCES:
patent: 6917069 (2005-07-01), Kianian et al.
patent: 2002/0034846 (2002-03-01), Wang
patent: 2003/0141539 (2003-07-01), Chern
patent: 2000-216270 (2000-08-01), None

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