Method of forming an integrated circuit with multi-length...

Details Method of forming an integrated circuit with multi-length... Method of forming an integrated circuit with multi-length...

2007-08-07

2007-08-07

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S401000, C257S368000, C257SE29011, C257S206000

Reexamination Certificate

active

11323659

ABSTRACT:
A monolithic power integrated circuit fabricated on a semiconductor die includes a control circuit and a first output high voltage field-effect transistor (HVFET) having source and drain segments substantially equal to a first length. A second output HVFET has source and drain segments substantially equal to a second length. At least one of the first and second output HVFETs is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

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