Fabrication method for a semiconductor structure having...

Details Fabrication method for a semiconductor structure having... Fabrication method for a semiconductor structure having...

2007-12-25

2007-12-25

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S386000, C438S387000, C257SE29346

Reexamination Certificate

active

11127505

ABSTRACT:
The present invention provides a fabrication method for a semiconductor structure having integrated capacitors and a corresponding semiconductor structure. The fabrication method has the following steps of: providing a semiconductor substrate (1; 1′, 60, 1″) having a front side (VS) and a rear side (RS); providing trenches (5) in the semiconductor substrate (1; 1′, 60, 1″) proceeding from the front side (VS) of the semiconductor substrate (1; 1′, 60, 1″); providing a respective inner capacitor electrode (6) in the trenches (5); uncovering the inner capacitor electrodes (6) proceeding from the rear side (RS) of the semiconductor substrate (1; 1′, 60, 1″); providing a capacitor dielectric (40) on the uncovered inner capacitor electrodes (6); and providing outer capacitor electrodes (50) on the capacitor dielectric (40) on the inner capacitor electrodes (6).

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German Office Action dated Jan. 13, 2005.

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