Method of forming a static random access memory with a...

Details Method of forming a static random access memory with a... Method of forming a static random access memory with a...

2007-02-13

2007-02-13

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S368000, C257SE21640, C257SE27050

Reexamination Certificate

active

10994908

ABSTRACT:
An SRAM cell includes six transistors. The storage nodes are implemented using local interconnects. A first level of metal overlies the interconnects but is electrically isolated therefrom. Contact plugs are formed to couple the cell to the first level of metal. The contact plugs are preferably formed in a different process step than the interconnects.

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