Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-14
2007-08-14
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S595000, C257SE21438
Reexamination Certificate
active
11024629
ABSTRACT:
A method of manufacturing a semiconductor device having a dual-damascene gate including forming LDD regions by forming a gate oxide film on a semiconductor substrate, and by implanting lowly-concentrated impurities in the semiconductor substrate in accordance with a predetermined LDD pattern, and forming a nitride film on the gate oxide film, and forming a wide nitride film in accordance with the wide nitride pattern. The method also includes forming a narrow nitride film by a narrow etching process on the wide nitride film in accordance with a predetermined narrow nitride film pattern, forming a dual-damascene gate by depositing a polysilicon layer on an exposed entire surface and smoothing the deposited polysilicon layer to a top surface of the nitride film, and forming a gate electrode by removing a predetermined region of the polysilicon layer. The method further includes forming a sidewall nitride film on the gate electrode by etching the exposed nitride film in accordance with a nitride film pattern, and forming source/drain regions by performing an ion implantation process on the source/drain regions.
REFERENCES:
patent: 6607950 (2003-08-01), Henson et al.
patent: 6632717 (2003-10-01), Kim et al.
patent: 2002/0068394 (2002-06-01), Tokushige et al.
patent: 2002-0075575 (2002-10-01), None
Chaudhari Chandra
Dongbu Electronics Co. Ltd.
Lowe Hauptman & Berner LLP
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