Semiconductor device with low resistance contacts

Details Semiconductor device with low resistance contacts Semiconductor device with low resistance contacts

2007-02-20

2007-02-20

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000

Reexamination Certificate

active

10895553

ABSTRACT:
An N channel transistor and a P channel transistor have their source/drains contacts with different suicides to provide for low resistance contacts. The silicides are chosen to provide good matching of the work functions. The P-type source/drain contacts of the P channel transistors have a silicide that is close to the P work function of 5.2 electron volts, and the N-type source/drain contacts of the N channel transistors have a silicide that is close to the N work function of 4.1 electron volts. This provides for a lower resistance at the interface between these source/drain contact regions and the corresponding silicide. These suicides with differing work functions are achieved with implants as needed. For example, for N-type source/drain contacts and a base metal of cobalt, titanium, or nickel, the implanted material is platinum and/or iridium. For the P-type, the implanted material is erbium, yttrium, dysprosium, gadolinium, hafnium, or holmium.

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Pushkar Ranade, et al., “Work Function Engineering of Molybdenum Gate Electrodes by Nitrogen Implantation,” Electrochemical and Solid-State Letters, May 30, 2001, vol. 4, No. 11, pp. G85-7, Berkeley, California, U.S.A.
J.C. Hu, et al., “Source/Drain Formation using Cobalt Silicide as Diffusion Source for Deep Sub-micron nMOS,” SPIE Conference on Microelectronic Device Technology, Sep. 1998, vol. 3506, pp. 103-111, Santa Clara, California, U.S.A.

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