Method of producing the same

Details Method of producing the same Method of producing the same

2007-10-23

2007-10-23

Tran, Long K. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S205000, C438S234000, C438S309000, C438S311000, C257S350000, C257S197000, C257SE29200

Reexamination Certificate

active

11638551

ABSTRACT:
A method of producing a semiconductor device includes the steps of: preparing a double SOI substrate, forming a deep trench, filling the deep trench, forming an opening, forming a cavity, depositing a polycrystalline silicon layer, and forming a bipolar transistor.

REFERENCES:
patent: 5212397 (1993-05-01), See et al.
patent: 7018884 (2006-03-01), Berthold et al.
patent: 6-69430 (1994-03-01), None
patent: 2001-274234 (2001-10-01), None

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