Interlayer connector for preventing delamination of...

Details Interlayer connector for preventing delamination of... Interlayer connector for preventing delamination of...

2007-02-20

2007-02-20

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000

Reexamination Certificate

active

10710147

ABSTRACT:
An interlayer connector for preventing delamination of semiconductor layers, and methods of forming the connector are disclosed. The connector includes a first connector head in a first distal layer, a second connector head in a second distal layer and a connector body coupling the first and second connector heads. Each connector head has a dimension greater is size than the connector body such that the layers are securely held together. The interlayer connector may be isolated from current-carrying wiring or provided in the form of a contact via. The interlayer connector provides a mechanical mechanism to prevent layers from delaminating regardless of the materials used. The invention also eliminates the need for white space fill above and below via fill by using the connectors coplanar with the on device wiring.

REFERENCES:
patent: 6333560 (2001-12-01), Uzoh
patent: 6372409 (2002-04-01), Yu
patent: 6492262 (2002-12-01), Uzoh
patent: 6559543 (2003-05-01), Dunham et al.
patent: 6613664 (2003-09-01), Barth et al.
Brown, Alan S., “Fast Films,” IEEE Spectrum Online, http://www.spectrum.ieee.org, May 12, 2003, pp. 1-9.
Lammers, David, “IBM May Drop Low-K Materials for Advanced ICs,” EETimes, http://www.eetimes.com/story/OEG20030417S0042, Apr. 17, 2003, pp. 1-2.

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