Method for producing capacitors having increased surface area fo

Details Method for producing capacitors having increased surface area fo Method for producing capacitors having increased surface area fo

1997-03-07

1998-08-11

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

057926930

ABSTRACT:
A method for manufacturing an array of stacked capacitors with increased capacitance on a dynamic random access memory (DRAM) device was achieved. The invention uses a thermal oxidation and anisotropic plasma etch to form sidewall spacers in a recess or trench in a first polysilicon layer over the capacitor node contacts to the FETs. The recesses within the sidewall spacers are then filled with a second polysilicon layer and chem/mech polished back to form studs. The sidewall spacers are then selectively removed by a wet etch and a patterned second photoresist layer is used to pattern the first polysilicon layer into an array of capacitor bottom electrodes with vertical portions that increase the surface area. An interelectrode dielectric layer is formed on the bottom electrodes and a third polysilicon layer is deposited and patterned to form the top electrodes and to complete the array of stacked capacitors on the DRAM device.

REFERENCES:
patent: 5468670 (1995-11-01), Ryou
patent: 5482886 (1996-01-01), Park et al.
patent: 5491103 (1996-02-01), Ahn et al.
patent: 5552334 (1996-09-01), Tseng
patent: 5710075 (1998-01-01), Tseng

Affiliated with

Also associated with

Rating

Method for producing capacitors having increased surface area fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing capacitors having increased surface area fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing capacitors having increased surface area fo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-388574