Semiconductor device having a capacitor with a stepped...

Details Semiconductor device having a capacitor with a stepped... Semiconductor device having a capacitor with a stepped...

2007-06-05

2007-06-05

Sarkar, Asok K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S308000, C257S309000, C257SE27086, C438S253000

Reexamination Certificate

active

10996969

ABSTRACT:
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an etch loss of the storage electrode, a dielectric layer disposed on the storage electrode, and a plate electrode disposed on the dielectric layer. Because the complementary member compensates for the etch loss of the storage electrode during several etching processes, the deterioration of the structural stability of the storage electrode may be prevented. Additionally, because the complementary member is formed on an upper portion of the storage electrode, the storage electrode may have a sufficient thickness to enhance the electrical characteristics of the capacitor that includes the storage electrode.

REFERENCES:
patent: 5610741 (1997-03-01), Kimura
patent: 6037206 (2000-03-01), Huang et al.
patent: 6080623 (2000-06-01), Ono
patent: 6156608 (2000-12-01), Chen
patent: 6162670 (2000-12-01), Wu et al.
patent: 6548853 (2003-04-01), Hwang et al.
patent: 2001/0022369 (2001-09-01), Fukuda et al.
patent: 2003/0190808 (2003-10-01), Kim et al.
patent: 2003-224210 (2003-08-01), None
patent: 2002-76473 (2002-10-01), None
patent: 2004-0058765 (2004-07-01), None
English language abstract of Japanese publication No. 2003-224210.
English language abstract of Korean publication No. 2002-76473.
English language abstract of Korean Publication No. 2004-0058765.

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