Method for simultaneously fabricating ONO-type memory cell,...

Details Method for simultaneously fabricating ONO-type memory cell,... Method for simultaneously fabricating ONO-type memory cell,...

2007-11-20

2007-11-20

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21625

Reexamination Certificate

active

10898273

ABSTRACT:
Conventional fabrication of top oxide in an ONO-type memory cell stack usually produces Bird's Beak. Certain materials in the stack such as silicon nitrides are relatively difficult to oxidize. As a result oxidation does not proceed uniformly along the multi-layered height of the ONO-type stack. The present disclosure shows how radical-based fabrication of top-oxide of an ONO stack (i.e. by ISSG method) can help to reduce formation of Bird's Beak. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse deeply through already oxidized layers of the ONO stack such as the lower silicon oxide layer. As a result, a more uniform top oxide dielectric can be fabricated with more uniform breakdown voltages along its height. Additionally, adjacent low and high voltage transistors may benefit from simultaneous formation of their gate dielectrics with use of the radical-based oxidizing method.

REFERENCES:
patent: 6358867 (2002-03-01), Tews et al.
patent: 2005/0110102 (2005-05-01), Wang et al.
Trowbridge, “Enhanced Oxidation of Silicon Nitride using In Situ Steam Generation”, 199th ECS Conference, 2001, No. 269. 2001.

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