Method and apparatus for real time metal film thickness...

Details Method and apparatus for real time metal film thickness... Method and apparatus for real time metal film thickness...

2007-12-18

2007-12-18

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

C438S014000, C324S229000, C156S345130

Reexamination Certificate

active

10463525

ABSTRACT:
A semiconductor processing system is provided. The semiconductor processing system includes a first sensor configured to isolate and measure a film thickness signal portion for a wafer having a film disposed over a substrate. A second sensor is configured to detect a film thickness dependent signal in situ during processing, i.e. under real process conditions and in real time. A controller configured to receive a signal from the first sensor and a signal from the second sensor. The controller is capable of determining a calibration coefficient from data represented by the signal from the first sensor. The controller is capable of applying the calibration coefficient to the data associated with the second sensor, wherein the calibration coefficient substantially eliminates inaccuracies introduced to the film thickness dependent signal from the substrate. A method for calibrating an eddy current sensor is also provided.

REFERENCES:
patent: 3815016 (1974-06-01), Nix et al.
patent: 4850157 (1989-07-01), Holmstrand
patent: 5240552 (1993-08-01), Yu et al.
patent: 5473247 (1995-12-01), You et al.
patent: 5485082 (1996-01-01), Wisspeintner et al.
patent: 5660672 (1997-08-01), Li et al.
patent: 5709593 (1998-01-01), Guthrie et al.
patent: 5926020 (1999-07-01), Samson
patent: 6051499 (2000-04-01), Tolles et al.
patent: 6132289 (2000-10-01), Labunsky et al.
patent: 6165057 (2000-12-01), Gill, Jr.
patent: 6265870 (2001-07-01), Weischedel
patent: 6291992 (2001-09-01), Van Andel et al.
patent: 6338667 (2002-01-01), Sandhu et al.
patent: 6350179 (2002-02-01), Campbell et al.
patent: 6387807 (2002-05-01), Faubert et al.
patent: 6396158 (2002-05-01), Travis et al.
patent: 6563308 (2003-05-01), Nagano et al.
patent: 6707540 (2004-03-01), Lehman et al.
patent: 6722943 (2004-04-01), Joslyn
patent: 6808590 (2004-10-01), Gotkis et al.
patent: 2001/0001755 (2001-05-01), Sandhu et al.
patent: 2002/0192966 (2002-12-01), Shanmugasundram et al.
patent: 2003/0066200 (2003-04-01), Hellstrom
patent: 42 27 735 (1994-02-01), None
patent: 0 370 691 (1990-05-01), None
patent: 0 459 441 (1991-05-01), None
patent: 0 763 402 (1997-03-01), None
patent: 1 452 417 (1976-10-01), None
patent: WO91/15733 (1991-10-01), None

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