Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S128000, C438S586000, C438S597000, C438S598000, C257SE21551, C257SE21585
Reexamination Certificate
active
11175524
ABSTRACT:
A phototransistor of a CMOS image sensor suitable for decreasing the size of layout, and a method for fabricating the phototransistor are disclosed, in which the phototransistor includes a first conductive type semiconductor substrate; an STI layer on the first conductive type semiconductor substrate, to define an active area and a device isolation area in the first conductive type semiconductor substrate; a second conductive type well in the first conductive type semiconductor substrate; a gate line on the first conductive type semiconductor substrate; an ohmic contact layer in the second conductive type well, wherein the ohmic contact layer is overlapped with the gate line in state of interposing the STI layer therebetween; and a contact to connect the gate line with the ohmic contact layer through the STI layer.
REFERENCES:
patent: 5841126 (1998-11-01), Fossum et al.
patent: 5886659 (1999-03-01), Pain et al.
patent: 5990506 (1999-11-01), Fossum et al.
patent: 6005619 (1999-12-01), Fossum
patent: 6021172 (2000-02-01), Fossum et al.
patent: 6261908 (2001-07-01), Hause et al.
patent: 6261920 (2001-07-01), Oyamatsu
patent: 6462365 (2002-10-01), He et al.
patent: 6613690 (2003-09-01), Chang et al.
patent: 6849886 (2005-02-01), Han
patent: 2001/0010938 (2001-08-01), Bronner et al.
patent: 2002/0024092 (2002-02-01), Palm et al.
patent: 2003/0020119 (2003-01-01), Arai et al.
patent: 2005/0064620 (2005-03-01), Han
patent: 2005/0064665 (2005-03-01), Han
patent: 2005/0088556 (2005-04-01), Han
patent: 2005/0093036 (2005-05-01), Han
patent: 2005/0179093 (2005-08-01), Morris
patent: 2006/0124982 (2006-06-01), Ho et al.
patent: 2006/0249759 (2006-11-01), Morris
Dongbu Electronics Co. Ltd.
Estrada Michelle
Fortney Andrew D.
Stark Jarrett J.
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