Semiconductor device and process for manufacturing the same

Details Semiconductor device and process for manufacturing the same Semiconductor device and process for manufacturing the same

2007-06-26

2007-06-26

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21415

Reexamination Certificate

active

11260197

ABSTRACT:
The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.

REFERENCES:
patent: 5650339 (1997-07-01), Saito et al.
patent: 6150241 (2000-11-01), Deleonibus
patent: 2003/0014918 (2003-01-01), Burch et al.
patent: 2005/0024918 (2005-02-01), Salling et al.
patent: 8-213494 (1996-08-01), None
patent: 9-199730 (1997-07-01), None
patent: 10-150204 (1998-06-01), None
patent: 2000-514241 (2000-10-01), None
patent: 2000-082813 (2000-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and process for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3880595