Method of manufacturing a semiconductor integrated circuit...

Details Method of manufacturing a semiconductor integrated circuit... Method of manufacturing a semiconductor integrated circuit...

2007-08-28

2007-08-28

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C257SE51007

Reexamination Certificate

active

10917294

ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

REFERENCES:
patent: 5591681 (1997-01-01), Wristers et al.
patent: 6265327 (2001-07-01), Kobayashi et al.
patent: 6649538 (2003-11-01), Cheng et al.
patent: 6794257 (2004-09-01), Ishikawa et al.
patent: 2002/0072177 (2002-06-01), Grider
patent: 2002/0111000 (2002-08-01), Kawakami et al.
patent: 2003/0015763 (2003-01-01), Yoneda
patent: 2003/0141560 (2003-07-01), Sun
patent: 2003/0211672 (2003-11-01), Yao
patent: 8-167664 (1996-06-01), None
patent: 2000-357688 (2000-12-01), None
patent: 2001-332724 (2001-11-01), None

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