Flash memory device and method of repairing defects and...

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S189110

Reexamination Certificate

active

11380749

ABSTRACT:
A memory device includes a nonvolatile memory cell array including a plurality of memory cells with a portion of the memory cells to store fuse data, and a fuse register to store the fuse data from the memory cell array. An operation of the memory device is modified in response to the fuse register.

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patent: 2005/0018483 (2005-01-01), Imamiya et al.
patent: 2005/0077923 (2005-04-01), Kim et al.
patent: 2006/0279442 (2006-12-01), Kimura et al.
patent: 2003-288791 (2003-10-01), None
patent: 2004-118407 (2004-04-01), None
patent: 2003-0058256 (2003-07-01), None
patent: 2003-0067520 (2003-08-01), None
English language abstract of Korean Publication No. 2003-0058256.
English language abstract of Japanese Publication No. 2003-288791.
English language abstract of Japanese Publication No. 2004-118407.

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