Method for manufacturing semiconductor device including heat...

Details Method for manufacturing semiconductor device including heat... Method for manufacturing semiconductor device including heat...

2007-12-11

2007-12-11

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S787000, C438S791000

Reexamination Certificate

active

10916457

ABSTRACT:
A gate insulating film having an insulating film that contains at least nitrogen is formed on a substrate, and the gate insulating film is subjected to heat treatment for about 500 milliseconds or less using a flash lamp. Thereafter, a gate electrode is formed on the gate insulating film. Specifically, for example, a laminated film of SiO2film and an SixN(1-x)film, a laminated film of an SiO2film, HfSiO film, and an SixN(1-x)film, or the like, is formed in forming the gate insulating film.

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