Semiconductor device and method for forming the same

Details Semiconductor device and method for forming the same Semiconductor device and method for forming the same

2007-10-02

2007-10-02

Doan, Theresa (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S306000

Reexamination Certificate

active

11264068

ABSTRACT:
A semiconductor device may include first, second, and third semiconductor layers. The first and third layers may have a first dopant type, and the second layer may have a second dopant type. A first region within the third semiconductor layer may have the second dopant type. A second region between the first region and the second semiconductor layer may have the first dopant type. A third region above the second region may have the first dopant type. A fourth semiconductor region adjacent to the third region may have a first concentration of the second dopant type. A source contact region may have a second concentration of the second dopant type adjacent to the third semiconductor region and adjacent to the fourth semiconductor region. The second concentration may be higher than the first concentration.

REFERENCES:
patent: 5387553 (1995-02-01), Moksvold et al.
patent: 6927442 (2005-08-01), Kaneko et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for forming the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3870099