Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-20
2007-02-20
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S217000, C438S218000, C438S385000, C438S585000, C438S197000, C438S199000, C438S158000, C438S712000, C438S800000, C257S369000, C257S407000, C257S412000, C257S410000, C257S288000, C257S364000, C257S365000, C257S374000, C257SE21296, C257SE21622, C257SE21632
Reexamination Certificate
active
11232861
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.
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Ahmadi Mohsen
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Lindsay, Jr. Walter
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