Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-08-28
2007-08-28
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S204000, C365S149000, C365S239000, C365S189050
Reexamination Certificate
active
11148231
ABSTRACT:
A semiconductor memory device in which only global I/O buses, which receive one or more data groups that must be output first among a N number of data groups that are prefetched in a N-bit prefetch type, from an array of memory cells are precharged with a ½ power supply voltage, thereby making the output speed of the data groups that must be output first thing faster than that of the remaining data groups. The semiconductor memory device includes a data bus controller for precharging predetermined data buses that receive one or more data group that must be output to the outside first among a N number of data groups that are prefetched in a N-bit prefetch type from an array of memory cells, using information to decide an I/O sequence of the N number of the data groups.
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Hur J. H.
Hynix / Semiconductor Inc.
Lowe Hauptman & Berner LLP
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