Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-20
2007-11-20
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S443000, C257SE21680
Reexamination Certificate
active
11219752
ABSTRACT:
A method of fabricating a semiconductor device includes forming on a semiconductor substrate a gate electrode with a gate insulating film being interposed between the substrate and the electrode, forming an insulating film for element isolation protruding from a surface of the semiconductor substrate, forming an oxide film on the surface of the semiconductor substrate with the gate electrode and the element isolation insulating film having been formed, removing the oxide film in a region in which a self-aligned contact hole is to be formed while using a resist pattern for removing the oxide film formed in a region in which the self-aligned contact hole is formed, and etching a part of the element isolation insulating film protruding from the surface of the semiconductor substrate so that said part is substantially on a level with the surface of the semiconductor substrate, while using the resist pattern for removing the oxide film formed in the region in which the self-aligned contact hole is formed.
REFERENCES:
patent: 2005/0048689 (2005-03-01), Mabuchi
patent: 2002-57230 (2002-02-01), None
Hazama Hiroaki
Iizuka Hirohisa
Kamiya Eiji
Narita Kazuhito
Ohtani Norio
Kabushiki Kaisha Toshiba
Tsai H. Jey
LandOfFree
Method of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3852999