Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-21
2007-08-21
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S297000, C438S362000, C438S425000, C438S452000, C438S508000, C438S508000, C257S509000, C257S646000, C257SE31096, C257SE21556, C427S248100, C427S255280, C427S331000, C427S377000
Reexamination Certificate
active
11066713
ABSTRACT:
A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
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Maria E. Castagna et al. “High efficiency light emission devices in silicon.” MRS fall meeting, 2002.
Gao Wei
Hsu Sheng Teng
Joshi Pooran Chandra
Li Tingkai
Ono Yoshi
Law Office of Gerald Maliszewski
Maliszewski Gerald
Pham Thanh Van
Sharp Laboratories of America Inc.
Smith Matthew
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