Method of fabricating non-volatile memory

Details Method of fabricating non-volatile memory Method of fabricating non-volatile memory

2007-10-23

2007-10-23

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S279000, C257SE21638

Reexamination Certificate

active

11306248

ABSTRACT:
A method of fabricating non-volatile memory is provided. A plurality of first memory cells is formed on the memory cell region of a substrate. Each first memory cell includes a first composite layer, a first gate and a cap layer. There is a gap between two adjacent first memory cells. Then, a plurality of gates is formed in the respective gaps. The gates together with a second composite layer form a plurality of second memory cells. The second memory cells and the first memory cells together constitute a memory cell column. In the meantime, a plurality of gate structures is also formed on the peripheral circuit region. The gates in the gaps and the gates in the peripheral circuit region are formed using the same conductive layers.

REFERENCES:
patent: 4939690 (1990-07-01), Momodomi et al.
patent: 5930631 (1999-07-01), Wang et al.
patent: 2004/0121548 (2004-06-01), Fishburn et al.
patent: 2006/0220097 (2006-10-01), Ogura

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