Atomic layer deposition methods, and methods of forming...

Details Atomic layer deposition methods, and methods of forming... Atomic layer deposition methods, and methods of forming...

2007-12-25

2007-12-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S680000, C438S758000, C438S762000, C438S765000, C438S649000, C257SE21413, C257SE21171, C257SE21281, C257SE21584, C427S429000, C427S429000

Reexamination Certificate

active

10671922

ABSTRACT:
The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least one of the precursors is asymmetric with respect to a physical property. A field influencing the asymmetric physical property is oriented within the reaction chamber, and is utilized to affect alignment of the precursor having the asymmetric property as the material is formed. The asymmetric physical property can, for example, be an anisotropic charge distribution associated with the precursor, and in such aspect, the field utilized to influence the asymmetric physical property can be an electric field provided within the reaction chamber and/or a magnetic field provided within the reaction chamber. The methodology of the present invention can be utilized in atomic layer deposition processes.

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